Please use this identifier to cite or link to this item: https://idr.l4.nitk.ac.in/jspui/handle/123456789/8673
Title: Optoelectronic properties of graphene on silicon substrate: Effect of defects in graphene
Authors: Javvaji, B.
Ajmalghan, M.
Roy, Mahapatra, D.
Rahman, M.R.
Hegde, G.M.
Issue Date: 2015
Citation: Proceedings of SPIE - The International Society for Optical Engineering, 2015, Vol.9357, , pp.-
Abstract: Engineering of electronic energy band structure in graphene based nanostructures has several potential applications. Substrate induced bandgap opening in graphene results several optoelectronic properties due to the inter-band transitions. Various defects like structures, including Stone-Walls and higher-order defects are observed when a graphene sheet is exfoliated from graphite and in many other growth conditions. Existence of defect in graphene based nanostructures may cause changes in optoelectronic properties. Defect engineered graphene on silicon system are considered in this paper to study the tunability of optoelectronic properties. Graphene on silicon atomic system is equilibrated using molecular dynamics simulation scheme. Based on this study, we confirm the existence of a stable super-lattice. Density functional calculations are employed to determine the energy band structure for the super-lattice. Increase in the optical energy bandgap is observed with increasing of order of the complexity in the defect structure. Optical conductivity is computed as a function of incident electromagnetic energy which is also increasing with increase in the defect order. Tunability in optoelectronic properties will be useful in understanding graphene based design of photodetectors, photodiodes and tunnelling transistors. � 2015 SPIE.
URI: http://idr.nitk.ac.in/jspui/handle/123456789/8673
Appears in Collections:2. Conference Papers

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