Please use this identifier to cite or link to this item: https://idr.l4.nitk.ac.in/jspui/handle/123456789/6859
Title: Ultra low power active-RC filter in 180 nm CMOS technology
Authors: Rekha, S.
Laxminidhi, T.
Issue Date: 2013
Citation: Informal Proceedings of the 11th International Workshop of Electronics, Control, Measurement, Signals and Their Application to Mechatronics, ECMSM 2013, 2013, Vol., , pp.-
Abstract: This paper presents the design of a low voltage, ultra low power fifth order Chebyshev low pass filter operating at a power supply voltage of 0.5 V in 180 nm CMOS technology. A CMOS inverter based transconductor is used as the building block. A sub-threshold model is developed for the transconductor as the transistors are operating in sub-threshold region. A feedforward compensated OTA is designed using this transconductor and is used to realize the filter. Designed filter has a cutoff frequency of 150 kHz and offers a dynamic range of 54.16 dB with a figure of merit of 0.02 fJ. Power consumed by the filter is 21.79 microwatt. � 2013 IEEE.
URI: http://idr.nitk.ac.in/jspui/handle/123456789/6859
Appears in Collections:2. Conference Papers

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