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https://idr.l4.nitk.ac.in/jspui/handle/123456789/9690
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DC Field | Value | Language |
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dc.contributor.author | Narasimaiah, J.D. | - |
dc.contributor.author | Tonse, L. | - |
dc.contributor.author | Bhat, M.S. | - |
dc.date.accessioned | 2020-03-31T06:51:18Z | - |
dc.date.available | 2020-03-31T06:51:18Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | IET Circuits, Devices and Systems, 2018, Vol.12, 3, pp.249-255 | en_US |
dc.identifier.uri | 10.1049/iet-cds.2017.0029 | - |
dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/9690 | - |
dc.description.abstract | In this study, a design technique for low-energy consumption and area-efficient successive approximation register analogue-to-digital converter (ADC) is presented. Digital-to-analogue conversion equivalent voltage is acquired utilising passive sharing of charge between two unit capacitors and integration of the shared charge onto an input sample-and-hold capacitor, via a switched capacitor integrator circuit. The architecture is less parasitic sensitive and low noise, yielding an area and energyefficient ADC. To demonstrate the efficacy of the proposed technique, a 350 mV 8 bit 0.78 MS/s ADC is designed in a 90 nm complementary metal-oxide-semiconductor process. The ADC core has a small area footprint of 0.00145 mm2 and has a figure-of-merit of 11.39 fJ/conv-step. 2018, The Institution of Engineering and Technology. | en_US |
dc.title | 11.39 fJ/conversion-step 780 kS/s 8 bit switched capacitor-based area and energyefficient successive approximation register ADC in 90 nm complementary metal-oxide- semiconductor | en_US |
dc.type | Article | en_US |
Appears in Collections: | 1. Journal Articles |
Files in This Item:
File | Description | Size | Format | |
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1.11.39 fJ.pdf | 3.17 MB | Adobe PDF | View/Open |
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