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dc.contributor.authorSharma, B.S.
dc.contributor.authorBhat, M.S.
dc.date.accessioned2020-03-30T09:58:27Z-
dc.date.available2020-03-30T09:58:27Z-
dc.date.issued2017
dc.identifier.citationProceedings of 2017 International Conference on Innovations in Electronics, Signal Processing and Communication, IESC 2017, 2017, Vol., , pp.1-4en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/7055-
dc.description.abstractStructures based on Indium Gallium Arsenide (InGaAs) have attracted a lot of interest in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) technology recently. In this paper, a new nano-scale dual-gate MOSFET using In0.75 Ga0.25As is proposed. Multiple designs were simulated with different doping concentration in the source/drain region and the channel stop region to get an excellent Ion/Ioff. Since current in Metal-Oxide-Semiconductor (MOS) depends on the doping profile of the channel, a careful re-engineering of the channel would improve the MOSFET characteristics. Channel length, Lg of the proposed device is 20 nm which produces a significant amplification and supports large current due to wide channel interaction. Simulation of In0.75 Ga0.25 As MOSFET with Lg = 20 nm, gate-oxide thickness toxGate1 = toxGate2 = 2nm and a width Z = 1000nm, exhibits transconductance gm-max ? 293.626 ?S/?m, subthreshold slope SS ? 70 mV/decade and drain-induced-barrier-lowering DIBL = 41.66 mV/V. � 2017 IEEE.en_US
dc.titleA novel dual-gate nano-scale InGaAs transistor with modified substrate geometryen_US
dc.typeBook chapteren_US
Appears in Collections:2. Conference Papers

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