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DC Field | Value | Language |
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dc.contributor.author | Manju, M.S. | |
dc.contributor.author | Ajith, K.M. | |
dc.contributor.author | Valsakumar, M.C. | |
dc.date.accessioned | 2020-03-30T09:46:17Z | - |
dc.date.available | 2020-03-30T09:46:17Z | - |
dc.date.issued | 2018 | |
dc.identifier.citation | AIP Conference Proceedings, 2018, Vol.1953, , pp.- | en_US |
dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/6869 | - |
dc.description.abstract | Uniaxial stress was applied along zigzag and armchair directions in compressive and tensile regime to see if there is any metal-semiconductor transition in SiB. Metallicity increased with increasing stress both in compression and tension in zigzag and armchair directions instead of a metal-semiconductor transition. SiB maintained energetical stability in the whole range of applied stress. � 2018 Author(s). | en_US |
dc.title | Uniaxial stress induced band structure changes in h-SiB | en_US |
dc.type | Book chapter | en_US |
Appears in Collections: | 2. Conference Papers |
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