Please use this identifier to cite or link to this item: https://idr.l4.nitk.ac.in/jspui/handle/123456789/16721
Full metadata record
DC FieldValueLanguage
dc.contributor.authorShenoy U.S.
dc.contributor.authorBhat D.K.
dc.date.accessioned2021-05-05T10:31:26Z-
dc.date.available2021-05-05T10:31:26Z-
dc.date.issued2020
dc.identifier.citationMaterials Today Chemistry Vol. 18 , , p. -en_US
dc.identifier.urihttps://doi.org/10.1016/j.mtchem.2020.100384
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/16721-
dc.description.abstractIt is well known that thermoelectric (TE) materials are the most sought-after ones to mitigate energy crisis. Development of an efficient non-toxic, economic, abundant, and stable TE material is quite difficult due to its complicated traits. BaTiO3, a perovskite material shows a tremendous potential as a TE material due to its highly tunable electronic structure. Herein, for the first time we report use of dopant to improve the Seebeck coefficient of BaTiO3. We used first-principles density functional theory calculations to study the effect of vanadium doping in BaTiO3, and for the first time, we report that V acts as a resonant dopant in BaTiO3. The study on effect of site occupancy reveals that V in Ba site distorts the density of states below the conduction band by introducing resonance level at the Fermi level. The transport property calculations based on Boltzmann's relation predicts V-doped BaTiO3 to be a potential TE material. The results also provide new insights into development of BaTiO3 as a multifunctional material. © 2020 Elsevier Ltden_US
dc.titleVanadium-doped BaTiO3 as high performance thermoelectric material: role of electronic structure engineeringen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.