Please use this identifier to cite or link to this item: https://idr.l4.nitk.ac.in/jspui/handle/123456789/12403
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dc.contributor.authorReddy, P.R.
dc.contributor.authorAjith, K.M.
dc.contributor.authorUdayashankar, N.K.
dc.date.accessioned2020-03-31T08:39:10Z-
dc.date.available2020-03-31T08:39:10Z-
dc.date.issued2018
dc.identifier.citationApplied Physics A: Materials Science and Processing, 2018, Vol.124, 11, pp.-en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/12403-
dc.description.abstractAnodic porous alumina (APA) membranes with a uniform pore arrangement typically serve as an ideal template for formation of different types of nanostructured materials. In the present work, APA membranes were synthesized using two-step anodization in 0.3 M of oxalic and 0.3 M of sulphuric acid under the anodization potential of 40 V and 20 V respectively, at 8 C. Alumina nanowires (ANW) were synthesized by the chemical etching of the APA membranes using phosphoric acid solution. The optical absorbance and reflectance measurements of APA membranes were performed on a spectrometer in the wavelength range of 200 600 nm. The band-gap energy (3.7 and 4.3 eV for oxalic and sulphuric acid) of APA membranes was determined from UV visible absorption data. The photoluminescence (PL) investigations have revealed the presence of F and F+ defect centers, which could be attributes to oxygen vacancy-related defect centers in oxalic (483 and 466 nm) and sulphuric (423 and 421 nm) alumina. The mechanical properties of amorphous APA membranes were investigated by micro- and nanoindentation techniques. The results indicate that highest hardness (7.70 GPA) and Young s modulus (138.80 GPA) for sulphuric alumina compared with oxalic alumina. In sulphuric alumina, more number of ANW were observed compared with oxalic alumina. 2018, Springer-Verlag GmbH Germany, part of Springer Nature.en_US
dc.titleOptical and mechanical studies on free standing amorphous anodic porous alumina formed in oxalic and sulphuric aciden_US
dc.typeArticleen_US
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