Please use this identifier to cite or link to this item: https://idr.l4.nitk.ac.in/jspui/handle/123456789/10956
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dc.contributor.authorFernandes, B.J.
dc.contributor.authorRamesh, K.
dc.contributor.authorUdayashankar, N.K.
dc.date.accessioned2020-03-31T08:23:27Z-
dc.date.available2020-03-31T08:23:27Z-
dc.date.issued2019
dc.identifier.citationMaterials Science and Engineering B: Solid-State Materials for Advanced Technology, 2019, Vol.246, , pp.34-41en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/10956-
dc.description.abstractIn this report, we investigate the crystallization kinetics of Si20Te80?xBix (0 ? x ? 3) chalcogenide glassy systems using differential scanning calorimetry (DSC) technique. Systematic studies are carried out in order to understand the variation of thermal parameters such as glass transition temperature (Tg), onset crystallization temperature (Tc) and peak crystallization temperature (Tp) as a function of composition. Activation energy for glass transition (Eg) and crystallization (Ec) has been calculated based on the relevant statistical methods. Furthermore, thermal parameters such as change in specific heat (?Cp), fragility index (F), thermal stability (?T)& (S), enthalpy (?Hc), entropy (?S) are deduced to interpret distinct material behaviour as a function of composition. Structural evaluation like thermal devitrification studies elucidate the restricted glass formability of the studied glass system. Conclusively, a relationship has been established between the obtained thermal parameters and electrical switching characteristics. 2019 Elsevier B.V.en_US
dc.titleCrystallization kinetics of Si20Te80?xBix (0???x???3) chalcogenide glassesen_US
dc.typeArticleen_US
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