Please use this identifier to cite or link to this item: https://idr.l4.nitk.ac.in/jspui/handle/123456789/10834
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dc.contributor.authorDas, P.P.-
dc.contributor.authorJones, A.-
dc.contributor.authorCahay, M.-
dc.contributor.authorKalita, S.-
dc.contributor.authorMal, S.S.-
dc.contributor.authorSterin, N.S.-
dc.contributor.authorYadunath, T.R.-
dc.contributor.authorAdvaitha, M.-
dc.contributor.authorHerbert, S.T.-
dc.date.accessioned2020-03-31T08:23:09Z-
dc.date.available2020-03-31T08:23:09Z-
dc.date.issued2017-
dc.identifier.citationJournal of Applied Physics, 2017, Vol.121, 8, pp.-en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/10834-
dc.description.abstractThe observation of a 0.5 (2e2/h) conductance plateau in asymmetrically biased quantum point contacts (QPCs) with in-plane side gates (SGs) has been attributed to the onset of spin-polarized current through these structures. For InAs QPCs with the same width but a longer channel length, there is roughly a fourfold increase in the range of common sweep voltage applied to the SGs over which the 0.5 (2e2/h) plateau is observed when the QPC aspect ratio (ratio of length over the width of the narrow portion of the structure) is increased by a factor 3. Non-equilibrium Green's function simulations indicate that the increase in the size of the 0.5 (2e2/h) plateau is due to an increased importance, over a larger range of common sweep voltage, of the effects of electron-electron interactions in QPC devices with a larger aspect ratio. The use of asymmetrically biased QPCs with in-plane SGs and large aspect ratio could therefore pave the way to build robust spin injectors and detectors for the successful implementation of spin field effect transistors. 2017 Author(s).en_US
dc.titleDependence of the 0.5 (2e2/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gatesen_US
dc.typeArticleen_US
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